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HS-508ARH
CT RODU T LETE P TE PRODUC OBSO TITU 824 BS Data Sheet LE SU , FN4 POSSIBHS-508BRH
December 1999 File Number 4097.2
Radiation Hardened 8 Channel CMOS Analog Multiplexer with Overvoltage Protection [ /Title (HS508AR H) /Subject (Radiation Hardened 8 Channel CMOS Analog Multiplexer with Overvoltage Protection) /Autho r () /Keywords (Harris Corporation, Semiconductor Communications DiviThe HS-508ARH is a dielectrically isolated, radiation hardened, CMOS analog multiplexer incorporating an important feature; it withstands analog input voltages much greater than the supplies. This is essential in any system where the analog inputs originate outside the equipment. They can withstand a continuous input up to 10V greater than either supply, which eliminates the possibility of damage when supplies are off, but input signals are present. Equally important, it can withstand brief input transient spikes of several hundred volts; which otherwise would require complex external protection networks. Necessarily, ON resistance is somewhat higher than similar unprotected devices, but very low leakage current combine to produce low errors. Reference Application Notes 520 and 521, available from the Semiconductor Products Division of Intersil, for further information on the HS-508ARH multiplexer in general. The HS-508ARH has been specifically designed to meet exposure to radiation environments. Operation from -55oC to 125oC is guaranteed.
Features
* Electrically Screened to SMD # 5962-96742 * QML Qualified per MIL-PRF-38535 Requirements * Radiation Environment - Gamma Dose () . . . . . . . . . . . . . . . . . 1 x 105RAD(Si) - Dielectrically Isolated Device Islands - SEP >110 Mev-mg/cm2Analog/Digital Overvoltage Protection * Fail Safe with Power Loss (No Latchup) * Break-Before-Make Switching * DTL/TTL and CMOS Compatible * Analog Signal Range . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V * Fast Access Time * Supply Current at 1MHz Address Toggle . . . . . .4mA (Typ) * Standby Power . . . . . . . . . . . . . . . . . . . . . . . .7.5mW (Typ) Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-96742. A "hot-link" is provided on our homepage for downloading. www.intersil.com/spacedefense/newsafclasst.asp
Product Information
PRODUCT NUMBER 5962R9674201QEC 5962R9674201QXC 5962R9674201VEC 5962R9674201VXC INTERNAL MKT. NUMBER HS1-508ARH-8 HS9-508ARH-8 HS1-508ARH-Q HS9-508ARH-Q TEMP. RANGE (oC) -55 to 125 -55 to 125 -55 to 125 -55 to 125 -55 to 125 -55 to 125
HS1-508ARH/PROTO HS1-508ARH/PROTO HS9-508ARH/PROTO HS9-508ARH/PROTO
Pinouts
HS1-508ARH 16 LEAD SIDEBRAZE DIP MIL-STD-1835, CDIP2-T16 TOP VIEW
AO 1 EN 2 -VSUP 3 IN 1 4 IN 2 5 IN 3 6 IN 4 7 OUT 8 16 A1 15 A2 14 GND 13 +VSUP 12 IN 5 11 IN 6 10 IN 7 9 IN 8 A0 EN -VSUP IN1 IN2 IN3 IN4 OUT
HS9-508ARH 16 LEAD FLATPACK MIL-STD-1835, CDFP4-F16 TOP VIEW
1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 A1 A2 GND +VSUP IN5 IN6 IN7 IN8
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999
HS-508ARH Functional Diagram
IN 1
A0 1 DIGITAL ADDRESS
P
N
A1 OUT
A2
EN ADDRESS INPUT BUFFER AND LEVEL SHIFTER
8 P DECODERS N IN 8
MULTIPLEX SWITCHES
TRUTH TABLE A2 X L L L L H H H H A1 X L L H H L L H H A0 X L H L H L H L H EN L H H H H H H H H ``ON'' CHANNEL NONE 1 2 3 4 5 6 7 8
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HS-508ARH Schematic Diagrams
V+ R9 Q1 Q4 D3 LEVEL SHIFTER V+ R10 TTL REFERENCE CIRCUIT
OVERVOLTAGE PROTECTION V+
R2 R5 R3 R4 R6 R8 R7
LEVEL SHIFTED ADDRESS TO DECODE LEVEL SHIFTED ADDRESS TO DECODE
ADD IN.
D2 R1 200 D1
VV-
FIGURE 1. ADDRESS INPUT BUFFER AND LEVEL SHIFTER
FROM DECODE +V
OVERVOLTAGE V+
PROTECTION
Q5 D7 D6 D4 D5 OUT
A0 OR A0 IN A1 OR A1 A2 OR A2
R11 1K
Q6
V ENABLE VTO N-CHANNEL DEVICE OF THE SWITCH PAIR TO P-CHANNEL DEVICE OF THE SWITCH PAIR FROM DECODE
FIGURE 2. ADDRESS DECODER
FIGURE 3. MULTIPLEX SWITCH
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HS-508ARH Die Characteristics
DIE DIMENSIONS: 83 mils x 108 mils x 19 mils INTERFACE MATERIALS: Glassivation: Type: SiO2 Thickness: 8kA 1kA Top Metallization: Type: AlCu Thickness: 12.5kA 2kA Substrate: CMOS Dielectric Isolation Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Unbiased (DI) ADDITIONAL INFORMATION: Worst Case Current Density: 6.68e04 A/cm2 Transistor Count: 506
Metallization Mask Layout
HS-508ARH
IN2
IN1
-V
IN3
IN4 EN OUT
A0 A1 IN8 IN7 A2
IN6
IN5
+V
GND
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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